超宽谱TMDs/GaN基垂直界面电荷转移与自驱动光响应行为
关注'%3e%3cg%3e%3cpath%20d='M18,16L13,16L10,19L7,16L2,16L2,3L18,3L18,16ZM12.3787,14.5L10,16.878700000000002L7.62132,14.5L3.5,14.5L3.5,4.5L16.5,4.5L16.5,14.5L12.3787,14.5Z'%20fill-rule='evenodd'%20fill='%23FFFFFF'%20fill-opacity='1'/%3e%3c/g%3e%3cg%3e%3cg%3e%3cellipse%20cx='6'%20cy='9.5'%20rx='1'%20ry='1'%20fill='%23FFFFFF'%20fill-opacity='1'/%3e%3c/g%3e%3cg%3e%3cellipse%20cx='10'%20cy='9.5'%20rx='1'%20ry='1'%20fill='%23FFFFFF'%20fill-opacity='1'/%3e%3c/g%3e%3cg%3e%3cellipse%20cx='14'%20cy='9.5'%20rx='1'%20ry='1'%20fill='%23FFFFFF'%20fill-opacity='1'/%3e%3c/g%3e%3c/g%3e%3c/g%3e%3c/svg%3e)
联系合作 光电子
集成电路
成果单位： 北京科技大学
合作方式： 自行实施技术转让技术许可合作开发技术入股
所处阶段： 概念
关键词： 光电探测片上集成系统同质异相结构SOI衬底光电晶体管
总得分（满分100）
0
资本强度（满分0）
该成果得分：0
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成果公开日期
所属产业领域
转化现有基础
转化合作需求
转化意向范围
转化预期效益
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摘要
试试对话AI技术经理
WENXIAOGUO
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